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RJK0383DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G1723-0101 Preliminary Rev.1.01 Jul 10, 2008
Features
* * * * * Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
WPAK
234 D1 D1 D1
9 S1/D2
5678
1 G1
8 G2
9
S2 S2 S2 6 7 5
4321
(Bottom View)
MOS1
MOS2 + SBD
Absolute Maximum Ratings
(Ta = 25C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg MOS1 30 20 15 60 15 11 12.1 10 150 -55 to +150 MOS2 30 20 45 180 45 20 40 30 150 -55 to +150 Unit V V A A A A mJ W
C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C
REJ03G1723-0101 Rev.1.01 Jul 10, 2008 Page 1 of 4
RJK0383DPA
Electrical Characteristics
* MOS1 (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 8.5 12 TBD 1010 190 75 1.2 6.8 2.5 1.5 TBD TBD TBD TBD 0.84 20 Max -- 0.1 1 2.5 11.1 16.8 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 4.5 V Note4 ID = 7.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 15 A VGS =10 V, ID = 7.5 A VDD 10 V RL = 1.33 Rg = 4.7 IF = 15 A, VGS = 0 Note4 IF =15 A, VGS = 0 diF/ dt = 100 A/s
REJ03G1723-0101 Rev.1.01 Jul 10, 2008 Page 2 of 4
RJK0383DPA * MOS2 (Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 2.5 3.7 TBD 3200 720 300 1.5 20 8.6 6.5 TBD TBD TBD TBD 0.36 30 Max -- 0.1 1 2.5 3.3 5.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A mA V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID =22.5 A, VGS = 10 V Note4 ID = 22.5 A, VGS = 4.5 V Note4 ID = 22.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 45 A VGS = 10 V, ID = 22.5 A VDD 10 V RL = 0.44 Rg = 4.7 IF = 2 A, VGS = 0 Note4 IF = 45 A, VGS = 0 diF/ dt = 100 A/s
REJ03G1723-0101 Rev.1.01 Jul 10, 2008 Page 3 of 4
RJK0383DPA
Package Dimensions
Package Name WPAK-DV(2) JEITA Package Code - RENESAS Code PWSN0008DD-A Previous Code WPAK-DV(2) MASS[Typ.] 0.075g
5.1 0.2
0.8Max
5 8
3.9 0.2
6.1 +0.1 -0.3
5.9 +0.1 -0.2
(0.06) (0.06)
2.2 0.2 (0.50)
(1.25) (0.40) 0.45 0.1 (0.30) (0.30)
(0.30)
(3.20)
(1.30) 1.1 0.2 (0.30)
2.9 0.2
0.4 0.15
0.635Max
1.27Typ
0.2Typ
4
4.21Typ
1
0.05Max 0Min Stand-off
4.9 0.1
Ordering Information
Part No. RJK0383DPA-00-J0 Quantity 2500 pcs Taping Shipping Container
REJ03G1723-0101 Rev.1.01 Jul 10, 2008 Page 4 of 4
0.5 0.15 .
(0.55)
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Colophon .7.2

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